IGBT Technology Features
1. High quality substrate materials
FZ, FZ-like, MCZ wafers
Special edge profile for thin wafer
2. Silicon trench and Gate optimization
Deep trench etch & rounding optimization
Robust Gate oxide growth
Poly trench filling
3. Thick metal process
>3um metal deposition
Metal patterning
4. Backside THIN wafer processing
Wafer back grind down to 60um
Stress relief after backgrinding
Wafer handling & sorting
High energy and high dose Ion Implantation
Laser thermal activation of backside implants
Masking
Robust multi-layer backside metallization
IGBT devices are optimized for reverse breakdown ranging from 350V up to 6500V, balanced for turn-on and turn-off behaviors for great overall system performance
IGBT 600-1750V Applications
low to medium speed (Soft switching)
Battery charger
Energy storage
Solar inverter
UPS
Welding
Medium speed (~10 to 40KHz)
Home appliances
Motor control
Solar inverter
UPS
High speed (up to 100KHz)
Battery charger
Energy storage
PFC
SMPS
Solar
UPS
Welding
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